发明名称 |
Source side boron implanting and diffusing device architecture for deep sub 0.18 micron flash memory |
摘要 |
One aspect of the present invention relates to a method of making a flash memory cell involving the steps of providing a substrate having a flash memory cell thereon; forming a self-aligned source mask over the substrate, the self aligned source mask having openings corresponding to source lines; implanting a source dopant of a first type in the substrate through the openings in the self-aligned source mask corresponding to source lines; removing the self-aligned source mask from the substrate; cleaning the substrate; and implanting a medium dosage drain implant of a second type to form a source region and a drain region in the substrate adjacent the flash memory cell.
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申请公布号 |
US6524914(B1) |
申请公布日期 |
2003.02.25 |
申请号 |
US20000699972 |
申请日期 |
2000.10.30 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
HE YUE-SONG;HADDAD SAMEER;THURGATE TIMOTHY;CHANG CHI |
分类号 |
H01L21/8247;H01L21/336;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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