发明名称 Semiconductor memory device
摘要 The invention provides a semiconductor memory device which can easily constitute a large-capacity memory system for a compact information terminal at low cost. The semiconductor memory device (RAM) which receives a command from a CPU to read and write data is connected to a storage flash memory for reading and writing data in predetermined access units. The RAM includes a flash interface circuit for generating a control signal required for data access to the flash memory in synchronism with the command from the CPU, and a pseudo-SRAM serving as a memory element which can be randomly accessed. The RAM reads/writes data from/to either the flash memory or the pseudo-SRAM in accordance with the commands from the CPU.
申请公布号 US6523755(B2) 申请公布日期 2003.02.25
申请号 US20010974899 申请日期 2001.10.12
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 SHINOHARA TAKAYUKI
分类号 G11C11/403;G06F12/00;G06F12/06;G11C7/22;G11C11/00;G11C11/401;(IPC1-7):G06K19/06 主分类号 G11C11/403
代理机构 代理人
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