Embedded recess in polymer memory package and method of making same

摘要

The invention relates to packaging of a novel ferroelectric polymer memory device. Packaging is configured with a recess geometry into which the ferroelectric polymer memory device extends, that resists contact with the polymer portion of the ferroelectric polymer memory device. In one embodiment, an embedded recess geometry is used that resists thermal and mechanical stresses upon the polymer.Also disclosed is a method of forming the ferroelectric polymer memory device. The method may be applied to both inorganic and organic substrates.