Substrate processing apparatus and method

摘要

Substrate processing apparatus and method, by which an outside air and a gas-phase backward flow are restrained from entering the inside of a reaction chamber during the inside of a reaction chamber is opened to the outside through a substrate carrying-in/carrying-out opening. This substrate processing apparatus, for example, a vertical CVD apparatus (200) has a gas supply system (240) and a bypass line (264). The gas supply system (240) supplies an inert gas to a space (3a) between an outer tube (1A) and an inner tube (2A) of a reaction furnace (211) in a boat loading term and a boat unloading term. The bypass line (264) exhausts an atmosphere from a reaction chamber (1a) by performing a slow exhaust operation in the boat loading term and the boat unloading term.