| 摘要 |
A semiconductor power device with an insulated control circuit is formed in a chip of semiconductor material having predominantly a first type of conductivity. The device includes a region having a second type of conductivity, buried in the semiconductor material, and at least one insulated region of semiconductor material, containing at least part of the control circuit, disposed between the front surface of the chip and the buried region. The device also includes electrical contacts for the buried region and the semiconductor material. To eliminate the effects of parasitic components, the insulated region is delimited, at least partially, by an insulating dielectric material.
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