Reduction of tungsten silicide resistivity by boron ion implantation

摘要

A method for reducing the resistivity in a gate electrode is described. In one embodiment of the present invention, a silicon layer is formed on a substrate. A tungsten silicide layer is then formed on the silicon layer. The tungsten silicide layer is implanted with boron ions and an anneal is performed. The tungsten silicide layer and silicon layer are then patterned to form a gate electrode.