发明名称 |
Semiconductor memory device and method of manufacturing the same |
摘要 |
A gate oxide film is formed on a surface of a semiconductor substrate. A tunnel insulating film having a thickness smaller than that of the gate insulating film is formed in a portion thereof corresponding to a tunnel region. A first silicon film having a low impurity concentration is formed on the gate insulating film. A second silicon film having an impurity concentration higher than that of the first silicon film is formed on the first silicon film so as to be connected thereto. A third silicon film is formed on the second silicon film through an insulating film. The second and third silicon films are formed into floating and control gates, respectively, thereby forming a semiconductor memory device.
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申请公布号 |
US6525400(B2) |
申请公布日期 |
2003.02.25 |
申请号 |
US20020078506 |
申请日期 |
2002.02.21 |
申请人 |
DENSO CORPORATION |
发明人 |
FUJII TETSUO;SAKAI MINEKAZU;KUROYANAGI AKIRA |
分类号 |
H01L21/28;H01L29/788;(IPC1-7):H01L29/00 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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