发明名称 Method and composition for the selective removal of residual materials and barrier materials during substrate planarization
摘要 A method and composition for selective removal of a conductive material residue and a portion of the barrier layer from a substrate surface. The composition includes a chelating agent, an oxidizer, a corrosion inhibitor, abrasive particles, and water. The composition may further include one or more pH adjusting agents and/or one or more pH buffering agents. The method comprises selective removal of conductive material residue and a portion of the barrier layer from a substrate surface by applying a composition to a polishing pad, the composition including a chelating agent, an oxidizer, a corrosion inhibitor, abrasive particles, and water. The composition may further include one or more pH adjusting agents and/or one or more pH buffering agents. In one aspect, the method comprises providing a substrate comprising a dielectric layer with feature definitions formed therein, a barrier layer conformally deposited on the dielectric layer and in the feature definitions formed therein, and a copper containing material deposited on the barrier layer and filling the feature definitions formed therein, polishing the substrate to substantially remove the conductive material, and polishing the substrate with a composition comprising a chelating agent, an oxidizer, a corrosion inhibitor, abrasive particles, and water to remove conductive material residue and a portion of the barrier layer.
申请公布号 US6524167(B1) 申请公布日期 2003.02.25
申请号 US20000698863 申请日期 2000.10.27
申请人 APPLIED MATERIALS, INC. 发明人 TSAI STAN;SUN LIZHONG;LI SHIJIAN
分类号 C09G1/02;H01L21/321;(IPC1-7):B24B1/00 主分类号 C09G1/02
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