发明名称 |
Method of forming channel in thin film transistor using non-ionic excited species |
摘要 |
In the production of channel etch type bottom gate thin film transistors, etching damage in a channel etch step is prevented to improve the transistor performance. The channel etch is performed using non-ionic excited species, such as hydrogen radicals and fluorine radicals, generated by contact-decomposition reaction which utilizes a metal heated by electric resistance heating. Alternatively, in place of the channel etch, a portion of the source/drain semiconductor thin film immediately above the channel is nitrided by a non-ionic nitrogen-containing decomposition product that is produced by contacting molecules of a chemical substance containing nitrogen atoms with a metal heated by electric resistance heating to decompose the chemical molecules.
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申请公布号 |
US6524958(B2) |
申请公布日期 |
2003.02.25 |
申请号 |
US20010986269 |
申请日期 |
2001.11.08 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
SAKAI MASAHIRO;TERAUCHI MASAHARU |
分类号 |
G02F1/136;G02F1/1368;H01L21/00;H01L21/285;H01L21/302;H01L21/3065;H01L21/321;H01L21/3213;H01L21/336;H01L27/32;H01L29/786;(IPC1-7):H01L21/302 |
主分类号 |
G02F1/136 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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