Self-aligned split-gate flash memory cell and its contactless flash memory arrays

摘要

A self-aligned split-gate flash memory cell of the present invention comprises a single-side dish-shaped floating-gate structure being formed on a first gate-dielectric layer with a first intergate-dielectric layer being formed on its top portion and a second intergate-dielectric layer being formed on its inner sidewall and tip portion; a planarized control/select-gate conductive layer being at least formed over a second gate-dielectric layer and the first/second intergate-dielectric layers; and a common-source diffusion region and a common-drain diffusion region being implanted by aligning to the planarized control/select-gate conductive layer. The self-aligned split-gate flash memory cells are configured into two contactless array architectures: a contactless NOR-type flash memory array and a contactless parallel common-source/drain conductive bit-lines flash memory array.