| 发明名称 |
Method of making an anti-reflection structure for a conductive layer in a semiconductor device |
| 摘要 |
An anti-reflection structure formed on a gate electrode in a MOSFET device includes a first and second anti-reflection layers sandwiching therebetween a silicon nitride layer. Each of the anti-reflection layers has a two-layer structure including a silicon oxide nitride film and a protective silicon oxide film. The anti-reflection layer structure improves the accuracy of the pattern size for the gate electrode.
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| 申请公布号 |
US6524945(B2) |
申请公布日期 |
2003.02.25 |
| 申请号 |
US20020132213 |
申请日期 |
2002.04.26 |
| 申请人 |
NEC CORPORATION |
发明人 |
IWASAKI HARUO |
| 分类号 |
H01L21/336;H01L21/027;H01L21/033;H01L21/28;H01L21/314;H01L21/3213;H01L21/60;H01L21/768;H01L21/8242;H01L27/108;H01L29/78;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/336 |
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