| 发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
| 摘要 |
PURPOSE: To improve the dimensional accuracy of a pattern transferred to a wafer. CONSTITUTION: A pattern is transferred to a resist film 12 on a wafer 11 with a reduced-projection exposure method, using a half-tone phase shift mask, formed by a translucent phase shift pattern comprising a thin film pattern 2a which has the function of dimmer body and a resist pattern 3a, having the function of photosensitive composite for adjusting the phase.
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| 申请公布号 |
KR20030015824(A) |
申请公布日期 |
2003.02.25 |
| 申请号 |
KR20020030529 |
申请日期 |
2002.05.31 |
| 申请人 |
HITACHI, CO., LTD. |
发明人 |
HASEGAWA NORIO;TANAKA TOSHIHIKO;TERASAWA TSUNEO |
| 分类号 |
G03F1/08;G03F1/00;G03F1/10;G03F1/32;G03F1/54;G03F1/56;G03F1/68;G03F1/72;G03F1/84;G03F7/20;H01L21/027;H01L21/8238;H01L27/092;(IPC1-7):H01L21/027 |
主分类号 |
G03F1/08 |
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