发明名称 SUBSTRATE FOR THIN FILM FORMATION
摘要 <p>PROBLEM TO BE SOLVED: To provide a substrate for thin film formation excellently forming a thin film without damaging the characteristics and will not generating peel off or the like. SOLUTION: For the substrate 10 for the thin film formation, a stainless steel plate composed of SUS430, for instance, is used as the base material, and an Al layer 16 is formed via an Ni layer 14 on both surfaces of it respectively. That is, a structure where the Ni layer 14 is interposed between the base material 12 and the Al layer 16 as a barrier layer is attained, and at heat treatment for forming an Si thin film for a solar battery, for instance, mutual diffusion occurring between the Al layer 16 and the substrate 12 is prevented, and generation of a weak intermetallic compound, based on the mutual diffusion, is suppressed. Thus, the Al layer 16 is prevented from peeling off from the base material 12.</p>
申请公布号 JP2003051606(A) 申请公布日期 2003.02.21
申请号 JP20020161786 申请日期 2002.06.03
申请人 DAIDO STEEL CO LTD 发明人 SUZUKI YOSHITAKE;YOSHIDA HIROAKI
分类号 C23C16/46;H01L31/04;(IPC1-7):H01L31/04 主分类号 C23C16/46
代理机构 代理人
主权项
地址