| 摘要 |
The invention concerns an integrated circuit comprising a substrate (1), at least a capacitor (9) arranged above the substrate (1) and provided with a first electrode (5), a second electrode (8), and a dielectric (7) arranged between the two electrodes, at least a connecting feedthrough between the substrate (1) and a conductive level located above the capacitor (9), and a dielectric material covering the substrate (1) and enclosing the capacitor (9) and the feedthrough. The feedthrough comprises a first portion (18) arranged between the substrate and the lower level of the first electrode, a second portion (6) arranged between the lower level of the first electrode and the upper level of the first electrode, and a third portion (12) in contact with the first electrode and flush with said conductive level, the second portion being made of the same material as the first electrode of the capacitor. |
