| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, with which a wiring structure can be easily prevented from being analyzed by etching a package, a protecting film and an insulating film between metal wirings or the like with a solution. SOLUTION: In the semiconductor device in a multilayer wiring structure provided with a layer insulating film while covering a front face with the protecting film, the protecting film and/or layer insulating film is formed of a material, with which an etching rate is partially enlarged above a wiring layer. |
