发明名称 METHOD AND DEVICE FOR MANUFACTURING NON-SINGLE CRYSTAL FILM
摘要 PROBLEM TO BE SOLVED: To improve vacuum treatment characteristics, to heighten uniformity of the vacuum treatment characteristics at very high level in particular and to manufacture a non-single crystal film which is excellent and uniform in film thickness, film quality and surface properties. SOLUTION: A cylindrical base body 101 is installed in a pressure reducible reaction vessel 102, a gaseous raw material is introduced in the reaction vessel 102, plasma of the gaseous raw material is generated by supplying high frequency power to a high frequency electrode 104 and decomposed species are deposited to form the non-single crystal film. High frequency power which is obtained by synthesizing at least two high frequency waves of different frequencies in a frequency range between 10 MHz and 250 MHz and two of which having highest power value among high frequency waves of frequency in this frequency range are both above 10% of total power of both, is supplied to the high frequency electrode 104. Further DC voltage or/and AC voltage are applied to the plasma via a bias electrode 114.
申请公布号 JP2003049268(A) 申请公布日期 2003.02.21
申请号 JP20010237646 申请日期 2001.08.06
申请人 CANON INC 发明人 UEDA SHIGENORI;OTSUKA TAKASHI;KAWAMURA KUNIMASA
分类号 G03G5/08;B01J19/08;C23C16/26;G03G5/082;H01L21/205;(IPC1-7):C23C16/26 主分类号 G03G5/08
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