发明名称 METHOD FOR REWRITING DATA OF NON-VOLATILE MEMORY
摘要 <p>PROBLEM TO BE SOLVED: To obtain a method for rewriting data of a nonvolatile memory which can make the number of times of rewrite averaged by each physical block constituting the nonvolatile memory, such as a NAND type flash memory, using a simple system. SOLUTION: In the method for rewriting the data for the nonvolatile memory, the data associated with a logical block is rewritten, by deleting the data of a physical block which is first associated with the logical block to be rewritten and writing the data in a free block which is to be newly associated. The method is provided with a step of confirming the number of free blocks and a step of generating random numbers and select one from among a plurality of free blocks.</p>
申请公布号 JP2003050747(A) 申请公布日期 2003.02.21
申请号 JP20010236928 申请日期 2001.08.03
申请人 SONY CORP 发明人 NAKADA MITSURU;TOMITA MITSUHIKO
分类号 G06F12/16;G06F12/00;G06F12/02;G11C16/02;(IPC1-7):G06F12/16 主分类号 G06F12/16
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