| 摘要 |
PROBLEM TO BE SOLVED: To improve reliability in a semiconductor laser by preventing heating at the end faces while operating in a high output. SOLUTION: An n-GaAlAs clad layer 102, n-or i-InGaP lower optical waveguide layer 103, i-InGaAsP lower barrier layer 104, InGaAsP compressive strain quantum well active layer 105, p-InGaAsP or i-InGaAsP upper barrier layer 106, and InGaP cap layer (thickness of about 10 nm) 107 are laminated on an n-GaAs substrate 101. Regions of layers 107, 106, 105 and 104 in the vicinity of end faces adjacent to resonator end faces are removed. An InGaP upper optical waveguide layer 108, having a band gap larger than that of the layer 105, is formed on the removed portions in the vicinity of the end faces and on the InGaP cap layer. Furthermore, a second conductivity-type clad layer 120 is formed on the layer 108.
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