发明名称 SEMICONDUCTOR ELEMENT PROVIDED WITH SELF-ALIGNED METAL CONTACT PLUGS AND METHOD FOR MANUFACTURING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor element provided with self-aligned metal contact plugs and a method for manufacturing the element. SOLUTION: A section perpendicular to a semiconductor substrate has a inverted T shape substantially, and an insulating film pattern thicker than a conducting layer pattern is formed on the semiconductor substrate between the conductive layer patterns. On the conductive layer pattern and the insulating film pattern, a nitride film liner is formed in a thickness wherein a trench restricted by the conducting layer pattern and the insulating film pattern is not buried perfectly. The other nitride film is so formed on the nitride film liner that the trench is buried perfectly. At least one metal contact plug in contact with the conducting layer pattern is formed, penetrating the other insulating film and the nitride film liner.
申请公布号 JP2003051555(A) 申请公布日期 2003.02.21
申请号 JP20020175047 申请日期 2002.06.14
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 PARK BYUNG-JUN
分类号 H01L21/768;H01L21/283;H01L21/3205;H01L21/60;H01L21/8234;H01L21/8238;H01L21/8242;H01L23/52;H01L27/088;H01L27/108;H01L31/072 主分类号 H01L21/768
代理机构 代理人
主权项
地址