| 摘要 |
PROBLEM TO BE SOLVED: To improve characteristics in p-type resistance reduction of a GaN- based compound semiconductor and in alloying of an electrode. SOLUTION: In a manufacturing method for a light-emitting element provided with an n<+> layer 13 of GaN, a clad layer 14 of n-type GaN, a light-emitting layer 15, a clad layer 16 of AlGaN to which Mg is added, a contact layer 17 of GaN to which Mg is added, a light-transmissive electrode 18A, and an electrode 18B; a surface of the n<+> layer 13 is exposed by etching a part of a layer provided on the upper side of the n<+> layer 13, the light transmissive electrode 18A is formed on the contact layer 17, the electrode 18B is formed on the exposed surface of the n<+> layer 13, heat treatment is conducted in the range of 500 to 600 deg.C inside a gas containing at least oxygen, and the p-type resistance reduction and an alloying processing are simultaneously performed. Satisfactory low resistance is obtained even at a low temperature. |
