CHEMICAL AMPLIFICATION TYPE POSITIVE WORKING RESIST COMPOSITION

摘要

PROBLEM TO BE SOLVED: To provide a chemical amplification type positive working resist composition which generates no resist residue when a semiconductor device is produced by a via first dual damascene method and can give a high resolution resist pattern capable of corresponding to a required fine pattern. SOLUTION: The chemical amplification type positive working resist composition contains (A) a polyhydroxystyrene having acid dissociable dissolution inhibiting groups substituted for at least part of the hydrogen atoms of hydroxyl groups and (B) a compound which generates an acid when irradiated with radiation, and the residual ratio of the acid dissociable dissolution inhibiting groups after a dissociation test with hydrochloric acid is <=40%.