| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide constitution which is manufacturable at a low cost for which the ratio of a Schottky junction part to an ohmic junction part is sufficiently high in a JBS diode and an MPS diode. SOLUTION: By forming a plurality of p-type semiconductor regions 13 on the main surface side of an n-type semiconductor substrate 10 separately or so as to be partially overlapped, and forming an n-type semiconductor region 17 shallow over the adjacent p-type semiconductor regions 13, the mutually opposing shallow regions of the adjacent p-type semiconductor regions 13 are compensated by an overlap with the n-type semiconductor region 17. Thus, the adjacent interval of the practical p-type semiconductor regions 13 is made to become wide on a main surface and narrow at a certain depth, the Schottky junction part is widened, and the Schottky junction part is easily pinched off at reverse bias.</p> |
