| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a cerium oxide abrasive that can polish the surface to be polished of an silicon oxide insulating film or the like flat and quickly, and to provide a polishing method of a semiconductor device substrate, using the cerium oxide abrasive. SOLUTION: A cerium abrasive contains slurry, where cerium oxide, with a ratio of a/b being equal to or larger than 2.5 is used, is dispersed into a medium, where (a) and (b) indicate the intensity by the (111) face and that by the (200) obtained by X-ray diffraction, respectively. Also, a specific substrate is polished by the cerium oxide abrasive.</p> |
