发明名称 SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS
摘要 <p>PROBLEM TO BE SOLVED: To provide a technology which realizes a TFT structure optimum for a pixel and the driving condition of a drive circuit by improving the characteristics of TFT with less number of photo-masks. SOLUTION: There are provided a semiconductor film, a first electrode, and a first insulating film sandwiched between the semiconductor film and the first electrode. There are provided, further,a second electrode and a second insulating film sandwiched between the semiconductor film and the second electrode. The first and second electrodes overlap each other with a plurality of channel formation regions provided to the semiconductor film in-between, to apply a constant voltage to the first electrode at all times.</p>
申请公布号 JP2003051599(A) 申请公布日期 2003.02.21
申请号 JP20020145644 申请日期 2002.05.21
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 YAMAZAKI SHUNPEI;AKIBA MAI
分类号 G02F1/1368;G09F9/30;H01L21/336;H01L21/8238;H01L27/08;H01L27/092;H01L29/786;H01L51/50;H05B33/14;(IPC1-7):H01L29/786;G02F1/136;H01L21/823 主分类号 G02F1/1368
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