| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma CVD device capable of preventing deposition of a deposition precursor of a raw gas which is dissociated and formed in plasma on high frequency application electrodes, reducing the quantity of the deposition precursor to be exhausted outside as much as possible, and improving the productivity of the film deposition together with the effective use of the raw gas. SOLUTION: In the plasma CVD device for performing the film deposition on a work by using plasma, a pair of high frequency application electrodes 2 and 3, and carrying means 6a-6d for transferring works 7 and 8 while facing each other between the pair of high frequency application electrodes 2 and 3 are provided in a film deposition chamber 1.
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