| 摘要 |
PROBLEM TO BE SOLVED: To provide an SiC molding which has high light impermeability, has little warpage and deformation, has excellent flatness, and is useful as a member for producing a semiconductor, and to provide a production method therefor. SOLUTION: In the SiC molding produced by a CVD(chemical vapor deposition) process, at least one or more light impermeable SiC layers with different particle properties consisting of a superfine polycrystal particulate structure are formed on the inside. The light impermeable SiC layer is formed at a vertically symmetrical position so as to satisfy tx/T=0.4 to 0.6 in the thickness direction of the SiC molding, wherein, the thickness of the SiC molding is defined as T, and the thickness from the surface of the SiC molding to the center line of the light impermeable SiC layer is defined as tx.
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