| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor element, in which a base growth layer can be separated together with a growth substrate at separation of a nitride-based compound semiconductor layer on the growth substrate into elements, and an electrode can be efficiently formed on a back surface, and to provide the semiconductor element. SOLUTION: A lower side conductive layer is formed, by using the semiconductor of a band gap energy smaller than the one of the base growth layer formed on a substrate, and an element isolation groove is formed for separation into areas for the respective elements. Irradiation is performed with a laser beam, having an energy value between the band gap energies of the base growth layer and the lower side conductive layer, ablations are generated on the lower side conductive layer side boundary of the base growth layer and the lower side conductive layer, a semiconductor growth layer is easily separated from the substrate and the base growth layer and simultaneously separated into a plurality of the elements, and the electrode is efficiently formed on the lower side conductive layer of the semiconductor element from the back surface. |
