| 摘要 |
<p>PROBLEM TO BE SOLVED: To realize read operation of a high speed low consumption current while increasing the number of parallel write cells and shortening a write time, in a non-volatile semiconductor memory. SOLUTION: This semiconductor memory device is provided with a plurality of memory blocks comprising a memory array in which memory cells are arranged at intersections of a plurality of word lines and a plurality of bit lines, and a memory block selecting means in which the memory block being less than that at write operation is selected out of the memory block at read operation and activated by responding to a write read determining signal, and the memory cell coupled to the word line selected in the activated memory block is activated.</p> |
