| 摘要 |
PROBLEM TO BE SOLVED: To properly perform cutting work by a laser by forming an insulating film on the upper layer of a fuse wiring for element separation with correct thickness. SOLUTION: In the semiconductor device provided with fuse wiring for element separation for separating a defective element, an etching stop film (insulating film) 180 capable of securing a selection ratio in respect to a metal wiring insulating film 120 is provided on the upper surface of the metal wiring insulating film 120 provided on the upper layer of metal wiring 110 for fuse. When controlling the film thickness of the insulating film on the upper layer of the metal wiring 110 for the fuse by etching the metal wiring insulating film 140 on that upper layer, the depth of a groove 170 generated by etching is exactly controlled by the etching stop film 180, and the insulating film on the upper layer of the metal wiring 110 for fuse is formed with proper film thickness. Thus, the influence of the film thickness error of the insulating film caused by various kinds of production processes or the like is excluded, and the metal wiring for the fuse can be surely cut with the laser.
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