| 摘要 |
PROBLEM TO BE SOLVED: To provide a photoelectric conversion film formation method for improving the efficiency of extraction of signal charges to the outside and reducing the avalanche multiplication start voltage of signal charges, and a photoelectric conversion film formation device and an image pickup element. SOLUTION: By aligning and arranging silicon nano crystal grains (silicon nanocrystals) whose surface is covered with a silicon oxide film in a film thickness direction, when the signal charges undergo tunnel conduction, the dispersion of a distance between the silicon nano crystal is reduced, optically generated signal charges are efficiently conducted/accelerated by an external electric field, the extraction efficiency of the signal charges to the outside is improved and the avalanche multiplication start voltage of the signal charges is reduced.
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