| 摘要 |
PROBLEM TO BE SOLVED: To design a circuit in which noise resistance is high and malfunction is little by a method wherein the kind of GND power sources which can be connected with parasitic capacitance is not restricted when the circuit is designed. SOLUTION: This semiconductor device is provided with an N-type well region 2 formed on a P-type semiconductor substrate 1, a P-type well region 3 formed in the N-type well region 2, and a P-type well region 12 formed in the N-type well region 2. In the semiconductor device, at least a part of the P-type well region 3 formed in the N-type well region 2 is formed in a lower layer of a wiring band 18, and the respective transistors 16, 17 are arranged in the P-type well region 12.
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