| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device wherein micronizing is enabled while cutoff characteristic is improved and its manufacturing method. SOLUTION: This semiconductor device is provided with a semiconductor substrate 1; source drain regions 5, 12 which are formed in the semiconductor substrate 1 and contain first impurities of a first conductivity; channel regions 18, 19 which are formed in the semiconductor substrate 1 between the source drain regions 5, 12 and contain second impurities of a second conductivity; a gate insulating film 6 which is formed on the semiconductor substrate 1 and contains second impurities in a region which is positioned just above at least a part of the region 19 of the channel regions 18, 19; a charge accumulation layer 14 formed on the gate insulating film 6 positioned on the channel regions 18, 19, and a control electrode 17 which is formed on the charge accumulation layer 14 and electrically connected with the charge accumulation layer 14, by using a connecting part 16 which is arranged on the charge accumulation layer 14 which is positioned just above at least a part of a region containing second impurities in the gate insulating film 6.
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