PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE AND WAFER TREATMENT DEVICE

摘要

PROBLEM TO BE SOLVED: To prevent abrasion and particles after cleaning process. SOLUTION: A CVD device is provided with a treatment chamber 14 for storing a plurality of wafers 24 while holding them on a boat 25, filming gas feed pipe 20 for feeding a filming gas for forming a desired film on the wafer to the treatment chamber 14, and coating gas feed pipes 22A and 22B for feeding a BTBAS gas 37 and an oxygen gas 36 for forming a BTBAS notiride film as a coating film 38 to the treatment chamber 14. By reducing friction between the wafer 24 and a holding groove 29 by the coating film 38 attached in a coating process after the cleaning process, abrasion and particle after the cleaning process can be prevented. Therefore, the yield in the production method not only for the CVD device but also for an IC can be improved.