| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which enables formation of a deep via hole even if its opening on the surface is small, and also to provide a method of manufacturing the same. SOLUTION: On a (100) crystal plane of a GaAs substrate 1, a plurality of HBTs(heterojunction bipolar transistors) 100 are formed. Near the HBTs 100, via holes 7 passing through the GaAs substrate 1 are formed. Each of the via holes 7 has a rectangular opening on the surface of the GaAs substrate 1. The longitudinal opening edges of each via hole on the surface are parallel with a crystal orientation [011] of the GaAs substrate 1.
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