| 摘要 |
PROBLEM TO BE SOLVED: To improve an element fraction defective in a nitride semiconductor laser apparatus where a nitride semiconductor laser element containing a nitride semiconductor substrate is installed with a junction faces down. SOLUTION: In a nitride semiconductor laser element chip, having a current constriction structure growing on a nitride semiconductor substrate, wire bond, is formed so that a position on the back of the nitride semiconductor substrate opposite to the current constriction structure substantially is included, thus reducing element fraction defective. |
