PULSE WIDTH APPROACH FOR CONTROLLING LATERAL GROWTH OF CRYSTALLIZED SILICON FILM

摘要

PROBLEM TO BE SOLVED: To provide a method of increasing silicon melting duration, when crystallizing silicon by improving lateral growth length(LGL and controlling laser irradiation. SOLUTION: A method is provided for crystallizing a silicon film in liquid crystal display(LCD) fabrication. The method comprises a process of forming an amorphous silicon film, a process of irradiating the silicon film with a laser pulse having a pulse width of 30 nanoseconds(ns) or greater, as measured at the full-width at half-maximum(FWHM), and a process where, in response to irradiating the silicon film, the silicon film is melted to promote the lateral growth of crystal grains.