FIN FIELD EFFECT TRANSISTOR AND METHOD FOR PRODUCING A FIN FIELD EFFECT TRANSISTOR
摘要
The invention relates to a fin field effect transistor that comprises a substrate, a fin structure above the substrate, as well as a drain region and a source region outside the fin structure above the substrate. The fin structure serves as a channel between the source region and the drain region. Source and drain region are formed once the gate has been produced.
申请公布号
WO03015182(A2)
申请公布日期
2003.02.20
申请号
WO2002DE02760
申请日期
2002.07.26
申请人
INFINEON TECHNOLOGIES AG;HOFMANN, FRANZ;KRETZ, JOHANNES;ROESNER, WOLFGANG;SCHULZ, THOMAS
发明人
HOFMANN, FRANZ;KRETZ, JOHANNES;ROESNER, WOLFGANG;SCHULZ, THOMAS