BASE MATERIAL TREATING METHOD AND ELECTRON DEVICE−USE MATERIAL

摘要

A method of treating a base material comprising at least (a) the nitriding step of supplying nitrogen radicals onto the surface of an electron device−use base material to form a nitride film on the surface, and (b) the hydrogenating step of supplying hydrogen radicals onto the surface of an electron device−use base material, whereby it is possible to restore the electron characteristics deterioration of an insulation film caused by turnaround encountered when an Si base material or the like is nitrided.