| 发明名称 |
Semiconductor memory device |
| 摘要 |
N well contact area 13 is integrally formed with second diffused area 12 within the upper parts of a N well and a P well, and P well contact area 14 is integrally formed with first diffused area 11 in the upper parts of the P well and the N well.
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| 申请公布号 |
US2003034572(A1) |
申请公布日期 |
2003.02.20 |
| 申请号 |
US20020211376 |
申请日期 |
2002.08.05 |
| 申请人 |
NII KOJI;TSUJIHASHI YOSHIKI;MATSUMOTO HISASHI |
发明人 |
NII KOJI;TSUJIHASHI YOSHIKI;MATSUMOTO HISASHI |
| 分类号 |
H01L21/8244;H01L27/11;(IPC1-7):H01L27/11 |
主分类号 |
H01L21/8244 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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