Structure of a non-volatile memory

摘要

A structure of a non-volatile memory including a substrate with a vertical ladder channel profile (VLCP), a stacked gate structure on the substrate, and a source/drain region in the substrate beside the stacked gate structure. The vertical ladder channel profile is a profile of the dopant concentration in a first doped region directly underneath the surface of the substrate and in a second doped directly underlying the first doped region, wherein the dopant concentration in the second doped region is larger than that in the first doped region.