| 摘要 |
A semiconductor memory apparatus includes a first and second memory bank. Each of these memory banks has a plurality of row and column lines and at least one redundant column line. An activation device selectively activates the redundant column line, thereby causing the redundant column line to become a replacement line for a defective column line. The activation device includes a plurality of programmable addressing fuses, and a programmable selection fuse having at least two electrical selection fuse states. The programmable selection fuse is configured such that an addressing fuse in the first selection fuse state is electrically associated with the first memory bank and an addressing fuse in the second selection fuse state is electrically associated with the second memory bank.
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