发明名称 |
PROCESS FOR PREPARING BURIED CONTACT SOLAR CELL |
摘要 |
PURPOSE: A process for preparing buried contact solar cell(BCSC) having low shading loss and electric power loss, thereby having excellent energy conversion efficiency, is provided. CONSTITUTION: The process for preparing buried contact solar cell comprises the steps of texturing the p-type semiconductor substrate(1) to form a pyramid structure on the front and rear surfaces of the substrate(1); diffusing an emitter to the substrate(1) to form p-n bonding; forming an oxide layer(3) on the front surface of the substrate(1); forming grooves on the substrate(1); doping the grooves with n-type impurities; vapor depositing conductive materials on the rear surface of the substrate(1) and then sintering to form back electrode(4); electroless plating with nickel onto the grooves to form nickel plating layer; electroplating with copper on the nickel plating layer to form copper plating layer; and electroless plating with silver onto the copper plating layer to form silver plating layer, thereby forming front electrode(2).
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申请公布号 |
KR100374811(B1) |
申请公布日期 |
2003.02.20 |
申请号 |
KR19960037674 |
申请日期 |
1996.08.31 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHO, YEONG HYEON;KIM, DONG SEOP |
分类号 |
H01M10/04;(IPC1-7):H01M10/04 |
主分类号 |
H01M10/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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