发明名称 |
A METHOD TO GAAS BASED LASERS AND A GAAS BASED LASER |
摘要 |
The invention relates to a method using dry etching to obtain contamination free surfaces on of a material chosen from the group comprising GaAs, GaAlAs , InGaAsP, and InGaAs to obtain nitride layers on arbitrary structures on GaAs based lasers, and a GaAs based laser manufactured in accordance with the method. The laser surface is provided with a mask masking away parts of its surface to be prevented from dry etching. The laser is then placed in vacuum . Dry etching is then performed using a substance chosen from the group containing: chemically reactive gases, inert gases, a mixture between chemically reactive gases and inert gases. A native nitride layer is created using plasma containing nitrogen. A protective layer and/or a mirror coating is added.
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申请公布号 |
CA2456142(A1) |
申请公布日期 |
2003.02.20 |
申请号 |
CA20022456142 |
申请日期 |
2002.08.09 |
申请人 |
COMLASE AB |
发明人 |
BLIXT, N. PETER;LINDSTROM, L. KARSTEN V.;SILFVENIUS, CHRISTOFER;CARLSTROM, CARL-FREDRIK;SRINIVASAN, ANAND;SODERHOLM, SVANTE H.;KRUMMENACHER, LAURENT |
分类号 |
H01L25/00;H01L21/302;H01L21/318;H01L21/461;H01L27/15;H01L31/12;H01L33/00;H01S5/00;H01S5/02;H01S5/028;H01S5/12;H01S5/18;H01S5/20;H01S5/22;H01S5/323;(IPC1-7):H01L33/00 |
主分类号 |
H01L25/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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