发明名称 Semiconductor photo-detecting apparatus
摘要 A semiconductor photodetecting apparatus 1 comprises a base 2 and a CCD chip 4. The CCD chip 4 is secured to the base 2 when a resin 8 is supplied and cured. The base 2 is formed with a gas supply path 15 and a gas exhaust path 16. Each of the gas supply path 15 and gas exhaust path 16 has one end opening to the upper face 2d of the base 2, and the other end opening to an end face of a mounting portion 2a. A gas storage section 19 and a gas supply pump 20 are connected to the gas supply path 15, whereby the gas supply pump 20 supplies N2 gas stored in the gas storage section 19 to a space within the base 2 by way of the gas supply path 15. The N2 gas supplied to the space is discharged from the gas exhaust path 16 after being refluxed through the space.
申请公布号 US2003034436(A1) 申请公布日期 2003.02.20
申请号 US20020266690 申请日期 2002.10.09
申请人 HAMAMATSU PHOTNICS K.K. 发明人 MURAMATSU MASAHARU;SHIBAYAMA KATSUMI;ITOH TOMOHISA
分类号 H01L27/14;H01L23/02;H01L27/146;H01L31/02;H01L31/0203;(IPC1-7):H01L31/00 主分类号 H01L27/14
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