发明名称 Semiconductor device manufacturing method
摘要 A method to realize extremely low profiling of semiconductor devices without reducing the yield and productivity. Semiconductor devices 10 are fabricated using step (B), in which multiple semiconductor chips 11 are mounted on substrate 12 having multiple adjoining chip mounting areas with their functional planes 11a facing the plane of said substrate; step (C), in which molding resin 13 is supplied to aforementioned substrate 12 in order to seal aforementioned multiple semiconductor chips 11; step (D), in which aforementioned molding resin 13 on aforementioned substrate 12 is ground together with said semiconductor chips 11 from its front side until aforementioned semiconductor chips 11 reaches a prescribed thickness; and step (F), in which substrate 12 mounted with aforementioned semiconductor chips 11 is cut into dice together with aforementioned molding resin 13 to form individual semiconductor devices 10.
申请公布号 US2003036257(A1) 申请公布日期 2003.02.20
申请号 US20020215803 申请日期 2002.08.09
申请人 MASUMOTO MUTSUMI;MASUMOTO KENJI 发明人 MASUMOTO MUTSUMI;MASUMOTO KENJI
分类号 H01L23/12;H01L21/56;H01L23/31;H01L23/433;(IPC1-7):H01L21/50;H01L21/48;H01L21/44 主分类号 H01L23/12
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