发明名称 |
AMMONIA FOR USE IN MANUFACTURE OF GAN-TYPE COMPOUND SEMICONDUCTOR AND METHOD FOR MANUFACTURING GAN-TYPE COMPOUND SEMICONDUCTOR |
摘要 |
Ammonia for use in the manufacture of a GaN-type compound semiconductor, filled in a charging container 18 such that at least a part of the ammonia is liquid and the liquid phase ammonia has a water concentration determined by a Fourier-transform infrared spectroscopy (FT-IR) of 0.5 vol ppm or less, is introduced in the gaseous state into a reaction chamber 11 housing therein a substrate 1, and a layer comprising a GaN-type compound started from this ammonia is formed on the substrate 1.
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申请公布号 |
US2003033973(A1) |
申请公布日期 |
2003.02.20 |
申请号 |
US19990473708 |
申请日期 |
1999.12.29 |
申请人 |
HAYASHIDA HIDEKI;ITO TAIZO;SAKAGUCHI YASUYUKI |
发明人 |
HAYASHIDA HIDEKI;ITO TAIZO;SAKAGUCHI YASUYUKI |
分类号 |
C01C1/00;C01C1/02;C23C16/30;C23C16/44;C23C16/448;C30B25/02;(IPC1-7):C30B23/00;C30B25/00;C30B28/12;C30B28/14 |
主分类号 |
C01C1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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