METHOD FOR FABRICATING FERROELECTRIC MEMORY TRANSISTOR

摘要

PURPOSE: A method for fabricating a ferroelectric memory transistor is provided to form a source/drain junction properly connected to a conductive channel of a transistor by etching a bottom electrode without damaging an underlying substrate. CONSTITUTION: A silicon substrate(20) on which a plurality of active areas are formed is prepared. A gate insulation layer(22) is deposited on the substrate. A polysilicon layer(24) is deposited over the gate insulation layer. A source region, a drain region and a gate electrode are formed. A bottom electrode material layer is deposited and the bottom electrode is finished without damaging the underlying gate insulation layer and the silicon substrate. A ferroelectric material layer is deposited on the bottom electrode. A top electrode material layer is deposited on the ferroelectric material. The transistor is finished after passivation oxide deposition, contact hole etching and metallization.