发明名称 |
Semiconductor thin-film manufacturing method, semiconductor device manufacturing method, semiconductor device, integrated circuit, electro-optical device, and electronic appliance |
摘要 |
According to the semiconductor thin-film and semiconductor device manufacturing method of the present invention, an insulating film having a through-hole between two layers of silicon film is provided, the silicon film is partially melted by irradiating a laser thereon, and a substantially monocrystalline film is continuously formed extending via the through-hole from at least part of the layer of silicon film below the insulating film that continues to the through-hole, to at least part of the layer of silicon film above the insulating film. It is therefore sufficient to form a through-hole with a larger diameter than that of a hole formed by the conventional method, because the diameter of the through-hole in the insulating film may be the same size or slightly smaller than the size of a single crystal grain that comprises the polycrystal formed in the silicon film below the insulating film. Costly precision exposure devices and etching devices are therefore unnecessary. Numerous high-performance semiconductor devices can also be formed easily on a large glass substrate, as in large liquid-crystal displays and the like.
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申请公布号 |
US2003034523(A1) |
申请公布日期 |
2003.02.20 |
申请号 |
US20020201720 |
申请日期 |
2002.07.24 |
申请人 |
SEIKO EPSON CORPORATION |
发明人 |
HIROSHIMA YASUSHI |
分类号 |
H01L21/20;H01L21/336;H01L21/77;(IPC1-7):H01L27/01 |
主分类号 |
H01L21/20 |
代理机构 |
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