发明名称 |
Method of selectively forming local interconnects using design rules |
摘要 |
The invention includes a method of fabricating a circuit in a manner to place certain structures within a predefined distance of one another. Electrical connections are formed between certain structures of silicon, by annealing a conductive material to cause silicon out-diffusing to form local interconnects. The silicon out-diffusion can be facilitated without a masking step thereby simplifying as well as speeding up the fabrication process. The invention also includes a local interconnect thus formed. |
申请公布号 |
US2003036258(A1) |
申请公布日期 |
2003.02.20 |
申请号 |
US20020245679 |
申请日期 |
2002.09.17 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
ABBOTT TODD;TRIVEDI JIGISH D.;VIOLETTE MIKE;DENNISON CHUCK |
分类号 |
H01L21/60;H01L21/768;H01L21/8239;H01L21/8242;H01L21/8244;H01L27/105;H01L27/11;(IPC1-7):H01L21/476;H01L21/22;H01L21/38;H01L21/44 |
主分类号 |
H01L21/60 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|