发明名称 Method of selectively forming local interconnects using design rules
摘要 The invention includes a method of fabricating a circuit in a manner to place certain structures within a predefined distance of one another. Electrical connections are formed between certain structures of silicon, by annealing a conductive material to cause silicon out-diffusing to form local interconnects. The silicon out-diffusion can be facilitated without a masking step thereby simplifying as well as speeding up the fabrication process. The invention also includes a local interconnect thus formed.
申请公布号 US2003036258(A1) 申请公布日期 2003.02.20
申请号 US20020245679 申请日期 2002.09.17
申请人 MICRON TECHNOLOGY, INC. 发明人 ABBOTT TODD;TRIVEDI JIGISH D.;VIOLETTE MIKE;DENNISON CHUCK
分类号 H01L21/60;H01L21/768;H01L21/8239;H01L21/8242;H01L21/8244;H01L27/105;H01L27/11;(IPC1-7):H01L21/476;H01L21/22;H01L21/38;H01L21/44 主分类号 H01L21/60
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