Generating data strobe signal for very fast semiconducting memory systems involves toggling data strobe signal in preamble period with pulse(s) coinciding with clock frequency

摘要

The method involves toggling the data strobe signal (RDS, WDS) in a preamble period (TPR) with one or more pulses coinciding with a clock frequency. The data strobe signal is a write data strobe signal transmitted to the semiconducting component via a signal line or a read data strobe signal generated by the semiconducting component and transmitted by it over the signal line. AN Independent claim is also included for a semiconducting component with a data strobe generating circuit.